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| DATA SHEET CS65-70B CS65-70D CS65-70M CS65-70N CS65-70P CS65-70PB SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS TO-65 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for phase control applications. MAXIMUM RATINGS (TA=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage Peak Non-Repetitive Reverse Voltage RMS On-State Current (TC=102C) Average On-State Current (TC=102C) Peak One Cycle Surge ( 60Hz) I2t Value for Fusing (t=8.3ms) Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Gate Power Average Gate Power (tp=10s) Peak Gate Current Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature Thermal Resistance VDRM, VRRM VRSM IT(RMS) IT(AV) ITSM I2t VFGM VRGM PGM PG(AV) IGM di/dt Tstg TJ J-C CS65 CS65 CS65 CS65 -70B -70D -70M -70N 200 300 400 500 600 700 63 40 1000 4100 20 10 10 1.0 3.0 200 -65 to +150 -65 to +125 0.35 800 900 CS65 -70P 1000 1100 CS65 -70PB UNITS 1200 1300 V V A A A A2s V V W W A A/s C C C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL IDRM, IRRM IGT IH VGT VTM dv/dt TEST CONDITIONS Rated VDRM, VRRM, TC=125C VD=12V, RL=33 IT=500mA VD=12V, RL=33 ITM=500A VD=.67 x VDRM, TC=125C MIN TYP MAX 6.0 100 200 3.0 3.0 200 UNITS mA mA mA V V V/s (SEE REVERSE SIDE) R2 CS65-70 SERIES SILCON CONTROLLED RECTIFIER MAXIMUM ON-STATE CHARACTERISTICS 1000 ITM, ON-STATE CURRENT (A T C = 2 5 C T C = 12 5 C 100 10 0 0.5 1 1.5 2 2.5 3 3.5 V TM, O N - ST A T E V O LT A G E ( V ) TO-65 PACKAGE - MECHANICAL OUTLINE A D B C DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A (DIA) 0.667 16.94 B 0.025 0.030 0.64 0.76 C 0.770 19.56 D 0.677 0.685 17.20 17.40 E 0.120 3.05 F 0.200 0.300 5.08 7.62 G (DIA) 0.145 0.155 3.68 3.93 H 0.065 0.085 1.65 2.15 J 1.200 1.250 30.48 31.75 K (DIA) 0.055 0.065 1.40 1.65 L 0.115 0.155 2.92 3.94 M 0.515 13.08 N 0.427 0.447 10.84 11.35 TO-65 (REV: R1) H F G E CATHODE J K GATE M L N ANODE 1/4-28 UNF - 3A THREAD R1 |
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